Atomera Announces GaN-on-Silicon Breakthrough to Target RF Applications

Atomera Inc. announced a new Gallium Nitride-on-Silicon (GaN-on-Silicon) approach. This approach aims to improve performance in radio frequency (RF) applications. It seeks to make silicon a more viable, lower-cost alternative to expensive silicon carbide substrates. Manufacturers typically use these substrates for high-performance RF GaN devices.

Atomera's Mears Silicon Technology (MST) introduces an oxygen-modified layer near the silicon wafer's surface. This layer improves crystal quality at the GaN and silicon interface. Company testing showed this method reduces parasitic channel losses, a key source of power loss. The reduction is by more than tenfold compared to standard GaN-on-Silicon. This breakthrough could enable broader adoption in markets like 5G and 6G infrastructure.