Kioxia Corporation and SanDisk commenced production of their 10th-generation 3D flash memory. Production began at the Fab2 (K2) facility in Kitakami, Japan. The new memory aims to meet increasing demand for high-capacity, high-performance storage. This demand comes from data centers and artificial intelligence applications.
The advanced chips utilize innovative CBA (CMOS directly Bonded to Array) technology. This technology offers higher performance and lower power consumption. The 10th-generation memory reportedly achieves a 59% increase in bit density. It does this by stacking 332 layers. The production start marks a significant step for the long-standing joint venture. The venture recently extended its agreement through December 2034.