Kioxia and SanDisk introduced their 10th-generation 3D flash memory at the Future of Memory and Storage conference. This Quad-Level-Cell (QLC) NAND technology sets a new industry benchmark for storage density.
The memory achieves a bit density exceeding 37 Gb/mm². This represents a 60% increase over the previous generation.
The hardware utilizes CMOS directly Bonded to Array (CBA) technology to improve performance and power efficiency. It is the first QLC 3D flash to reach a 4.8 Gb/s interface speed.
The technology addresses the growing data demands of AI and hyperscale data centers. These upgrades aim to solve power and cooling challenges in modern cloud infrastructure.